transistor (npn) fea t ures z excellent h fe linearity z complement s the 2a1 5 76a maximum ra tings ( t a =25 unl ess otherwise noted) symbol para mete r v a lue unit s v cbo coll ector-bas e v o lt age 60 v v ce o coll ector-emitter v o lt age 50 v v ebo emitter-base voltage 7 v i c collector current -continuous 150 ma p c collector power dissipation 200 mw t j junction temperature 150 t stg storage temperature -55-150 electrical chara cteristics (t amb=25 unless other w is e specified) p a r a m e t e r s y mb ol t e st condi tions min t yp max unit co llecto r -b ase b r eakd o w n v o lt ag e v (b r)cb o i c =5 0 a,i e = 0 60 v co llecto r -emitter b r ea kd o w n v o lt ag e v (b r)ce o i c =1 ma,i b = 0 50 v emitter-b a s e b r eakd o w n v o lt ag e v ( br ) ebo i e =5 0 a,i c =0 7 v co llecto r cu t-o ff cu rren t i cb o v cb = 60v ,i e = 0 0.1 a emitter cut-off current i ebo v eb =7 v , i c = 0 0.1 a dc cu rr en t g a in h fe(1) v ce =6 v , i c = 1 ma 120 560 co llecto r -emitter satu r atio n v o lt ag e v ce (sa t ) i c = 50ma,i b = 5 ma 0.4 v t r a n s i tion fre que nc y f t v ce = 12v ,i c = 2 ma,f= 30mhz 180 mhz co llecto r o u t pu t cap acit a n ce c ob v cb 12v ,i e = 0 ,f=1mhz 3.5 pf classifica tion of h fe(1) rank q r s range 120-270 180-390 270-560 marking bq br bs sot - 323 1. base 2. emit t e r 3. collect or 1 www.htsemi.com semiconductor jinyu 2SC4081 http://
2SC4081 1 www.htsemi.com semiconductor jinyu
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